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M12L64164A-6TG中文資料晶豪科技數(shù)據(jù)手冊PDF規(guī)格書

M12L64164A-6TG
廠商型號

M12L64164A-6TG

功能描述

1M x 16 Bit x 4 Banks Synchronous DRAM

文件大小

730.81 Kbytes

頁面數(shù)量

44

生產(chǎn)廠商 Elite Semiconductor Memory Technology Inc.
企業(yè)簡稱

ESMT晶豪科技

中文名稱

晶豪科技股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二

更新時(shí)間

2025-1-13 8:13:00

M12L64164A-6TG規(guī)格書詳情

GENERAL DESCRIPTION

The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES

● JEDEC standard 3.3V power supply

● LVTTL compatible with multiplexed address

● Four banks operation

● MRS cycle with address key programs

- CAS Latency (2 & 3)

- Burst Length (1, 2, 4, 8 & full page)

- Burst Type (Sequential & Interleave)

● All inputs are sampled at the positive going edge of the system clock

● DQM for masking

● Auto & self refresh

● 64ms refresh period (4K cycle)

- 15.6 μ s refresh interval

產(chǎn)品屬性

  • 型號:

    M12L64164A-6TG

  • 制造商:

    ESMT

  • 制造商全稱:

    Elite Semiconductor Memory Technology Inc.

  • 功能描述:

    1M x 16 Bit x 4 Banks Synchronous DRAM

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
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