M14C04-WS23中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The memory operates with a power supply as low as 2.5 V.

■ Two Wire I2C Serial Interface Supports 400 kHz Protocol

■ Single Supply Voltage (2.5 V to 5.5 V)

■ Hardware Write Control

■ BYTE and PAGE WRITE (up to 16 Bytes)

■ BYTE, RANDOM and SEQUENTIAL READ Modes

■ Self-Timed Programming Cycle

■ Automatic Address Incrementing

■ Enhanced ESD/Latch-Up Behaviour

■ 1 Million Erase/Write Cycles (minimum)

■ 40 Year Data Retention (minimum)

■ 5 ms Programming Time (typical)