M24128-BRDW6T集成電路（IC）的存儲器規(guī)格書PDF中文資料

M24128-BRDW6T屬于集成電路（IC）的存儲器。由意法半導(dǎo)體集團制造生產(chǎn)的M24128-BRDW6T存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The M24128 is a 128-Kbit I2C-compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 16 K × 8 bits.

The M24128-BW can operate with a supply voltage from 2.5 V to 5.5 V, the M24128-BR can operate with a supply voltage from 1.8 V to 5.5 V, and the M24128-BF and M24128-DF can operate with a supply voltage from 1.7 V to 5.5 V. All these devices operate with a clock frequency of 1 MHz (or less), over an ambient temperature range of –40 °C / +85 °C. The M24128-D offers an additional page, named the Identification Page (64 byte). The Identification Page can be used to store sensitive application parameters which can be (later) permanently locked in Read-only mode.

Features

? Compatible with all I2C bus modes:

– 1 MHz

– 400 kHz

– 100 kHz

? Memory array:

– 128 Kbit (16 Kbyte) of EEPROM

– Page size: 64 byte

– Additional Write lockable page (M24128-D order codes)

? Single supply voltage and high speed:

– 1 MHz clock from 1.7 V to 5.5 V

? Write:

– Byte Write within 5 ms

– Page Write within 5 ms

? Operating temperature range:

– from -40 °C up to +85 °C

? Random and sequential Read modes

? Write protect of the whole memory array

? Enhanced ESD/Latch-Up protection

? More than 4 million Write cycles

? More than 200-years data retention

Packages

? SO8 ECOPACK2?

? TSSOP8 ECOPACK2?

? UFDFPN8 ECOPACK2?

? WLCSP ECOPACK2?

? UFDFPN5 ECOPACK2?

? Unsawn wafer (each die is tested)