M24128-BWMN6T集成電路（IC）的存儲器規(guī)格書PDF中文資料

M24128-BWMN6T屬于集成電路（IC）的存儲器。由意法半導(dǎo)體集團制造生產(chǎn)的M24128-BWMN6T存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

DESCRIPTION

These I2C-compatible electrically erasable programmable memory (EEPROM) devices are organized as 32Kx8 bits (M24256-B) and 16Kx8 bits (M24128-B).

These memory devices are compatible with the I2C extended memory standard. This is a two wire serial interface that uses a bi-directional data bus and serial clock. The memory carries a built-in 4- bit unique Device Type Identifier code (1010) in accordance with the I2C bus definition.

■ Compatible with I2C Extended Addressing

■ Two Wire I2C Serial Interface Supports 400 kHz Protocol

■ Single Supply Voltage:

– 4.5V to 5.5V for M24xxx-B

– 2.5V to 5.5V for M24xxx-BW

– 1.8V to 3.6V for M24xxx-BR

■ Hardware Write Control

■ BYTE and PAGE WRITE (up to 64 Bytes)

■ RANDOM and SEQUENTIAL READ Modes

■ Self-Timed Programming Cycle

■ Automatic Address Incrementing

■ Enhanced ESD/Latch-Up Behavior

■ 100000 Erase/Write Cycles (minimum)

■ 40 Year Data Retention (minimum)