M24C04-BN6集成電路（IC）的存儲器規(guī)格書PDF中文資料

M24C04-BN6屬于集成電路（IC）的存儲器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的M24C04-BN6存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

DESCRIPTION

These I2C-compatible electrically erasable programmable memory (EEPROM) devices are organized as 2048/1024/512/256/128 x 8 bit (M24C16, M24C08, M24C04, M24C02, M24C01), and operate with a power supply down to 2.5 V (for the -W version of each device), and down to 1.8 V (for the -R version of each device).

■ Two Wire I2C Serial Interface

Supports 400 kHz Protocol

■ Single Supply Voltage:

– 4.5V to 5.5V for M24Cxx

– 2.5V to 5.5V for M24Cxx-W

– 1.8V to 3.6V for M24Cxx-R

■ Hardware Write Control

■ BYTE and PAGE WRITE (up to 16 Bytes)

■ RANDOM and SEQUENTIAL READ Modes

■ Self-Timed Programming Cycle

■ Automatic Address Incrementing

■ Enhanced ESD/Latch-Up Behavior

■ 1 Million Erase/Write Cycles (minimum)

■ 40 Year Data Retention (minimum)