M24C04-RMN6T集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

M24C04-RMN6T屬于集成電路（IC）的存儲(chǔ)器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的M24C04-RMN6T存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性?xún)煞N，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線(xiàn)、SPI、UFS、Xccela 總線(xiàn)和 1-線(xiàn)。

Description

These I2C-compatible electrically erasable programmable memory (EEPROM) devices are organized as 2048/1024/512/256/128 x 8 (M24C16, M24C08, M24C04, M24C02 and M24C01).

I2C uses a two-wire serial interface, comprising a bidirectional data line and a clock line. The devices carry a built-in 4-bit Device Type Identifier code (1010) in accordance with the I2C bus definition.

Features

■ Supports both the 100 kHz I2C Standard-mode and the 400 kHz I2C Fast-mode

■ Single supply voltage:

– 2.5 V to 5.5 V for M24Cxx-W

– 1.8 V to 5.5 V for M24Cxx

– 1.7 V to 5.5 V for M24Cxx-F

■ Write Control input

■ Byte and Page Write (up to 16 bytes)

■ Random and Sequential Read modes

■ Self-timed programming cycle

■ Automatic address incrementing

■ Enhanced ESD/latch-up protection

■ More than 1 million write cycles

■ More than 40-year data retention

■ Packages:

– SO8, TSSOP8, UFDFPN8: ECOPACK2? (RoHS-compliant and Halogen-free)

– PDIP8: ECOPACK1? (RoHS-compliant)