M25P64-VME6G中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

Description

The M25P64 is a 64 Mbit (8M x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus.

The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.

An enhanced Fast Program/Erase mode is available to speed up operations in factory environment. The device enters this mode whenever the VPPH voltage is applied to the Write

Protect/Enhanced Program Supply Voltage pin (W/VPP).

The memory is organized as 128 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 32768 pages, or 8388608 bytes.

The whole memory can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction.

Features

■ 64 Mbit of Flash memory

■ 2.7 V to 3.6 V single supply voltage

■ SPI bus compatible serial interface

■ 50 MHz clock rate (maximum)

■ VPP = 9 V for Fast Program/Erase mode (optional)

■ Page Program (up to 256 Bytes)

– in 1.4 ms (typical)

– in 0.35 ms (typical with VPP = 9 V)

■ Sector Erase (512 Kbit)

■ Bulk Erase (64 Mbit)

■ Electronic Signatures

– JEDEC standard two-Byte signature (2017h)

– RES instruction, one-Byte, signature (16h), for backward compatibility

■ Hardware Write Protection: protected area size defined by three non-volatile bits (BP0, BP1 and BP2)

■ More than 100 000 Erase/Program cycles per sector

■ More than 20-year data retention

■ Packages

– ECOPACK? (RoHS compliant)