M25PE10-VMN6P集成電路（IC）的存儲器規(guī)格書PDF中文資料

Description

The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus.

The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle.

Features

■ 1 or 2 Mbit of page-erasable Flash memory

■ 2.7 V to 3.6 V single supply voltage

■ SPI bus compatible serial interface

■ 75 MHz clock rate (maximum)

■ Page size: 256 bytes

– Page Write in 11 ms (typical)

– Page Program in 0.8 ms (typical)

– Page Erase in 10 ms (typical)

■ SubSector Erase (32 Kbits)

■ Sector Erase (512 Kbits)

■ Bulk Erase (1 Mbit for M25PE10, 2 Mbits for M25PE20)

■ Deep Power-down mode 1 μA (typical)

■ Electronic signature

– JEDEC standard two-byte signature (8012h for M25PE20, 8011h for M25PE10)

– Unique ID code (UID) with 16 bytes read only, available upon customer request only in the T9HX process

■ Software write protection on a 64-Kbyte sector basis

■ More than 100 000 Write cycles

■ More than 20 years data retention

■ Hardware write protection of the memory area selected using the BP0 and BP1 bits

■ Package

– ECOPACK? (RoHS compliant)