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M25PE20-VMN6P

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description TheM25PE20andM25PE10are2Mbit(256Kb×8bit)and1Mbit(128Kb×8bit)serialpagedFlashmemories,respectively.TheyareaccessedbyahighspeedSPI-compatiblebus. Thememoriescanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPageProgra

NUMONYX

numonyx

M25PE20-VMN6P

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M25PE20-VMN6P

包裝:托盤 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 類別:集成電路(IC) 存儲器 描述:IC FLASH 2MBIT SPI 75MHZ 8SO

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

M25PE20-VMN6G

1and2Mbit,lowvoltage,Page-ErasableSerialFlashmemorieswithByte-Alterability,50MHzSPIbus,standardpinout

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M25PE20-VMN6G

1and2Mbit,page-erasableserialFlashmemorieswithbytealterability,75MHzSPIbus,standardpinout

Description TheM25PE20andM25PE10are2Mbit(256Kb×8bit)and1Mbit(128Kb×8bit)serialpagedFlashmemories,respectively.TheyareaccessedbyahighspeedSPI-compatiblebus. Thememoriescanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPageProgra

NUMONYX

numonyx

M25PE20-VMN6TG

1and2Mbit,LowVoltage,Page-ErasableSerialFlashMemorieswithByte-Alterability,33MHzSPIBus,StandardPin-out

Description TheM25PE20andM25PE10are2Mbit(256Kb×8bit)and1Mbit(128Kb×8bit)SerialPagedFlashmemories,respectively.TheyareaccessedbyahighspeedSPI-compatiblebus. Thememoriescanbewrittenorprogrammed1to256Bytesatatime,usingthePageWriteorPageProgra

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M25PE20-VMN6TG

1and2Mbit,page-erasableserialFlashmemorieswithbytealterability,75MHzSPIbus,standardpinout

Description TheM25PE20andM25PE10are2Mbit(256Kb×8bit)and1Mbit(128Kb×8bit)serialpagedFlashmemories,respectively.TheyareaccessedbyahighspeedSPI-compatiblebus. Thememoriescanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPageProgra

NUMONYX

numonyx

M25PE20-VMN6TG

1and2Mbit,lowvoltage,Page-ErasableSerialFlashmemorieswithByte-Alterability,50MHzSPIbus,standardpinout

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M25PE20-VMN6TP

1and2Mbit,lowvoltage,Page-ErasableSerialFlashmemorieswithByte-Alterability,50MHzSPIbus,standardpinout

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M25PE20-VMN6TP

1and2Mbit,page-erasableserialFlashmemorieswithbytealterability,75MHzSPIbus,standardpinout

Description TheM25PE20andM25PE10are2Mbit(256Kb×8bit)and1Mbit(128Kb×8bit)serialpagedFlashmemories,respectively.TheyareaccessedbyahighspeedSPI-compatiblebus. Thememoriescanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPageProgra

NUMONYX

numonyx

M25PE20-VMN6TP

1and2Mbit,LowVoltage,Page-ErasableSerialFlashMemorieswithByte-Alterability,33MHzSPIBus,StandardPin-out

Description TheM25PE20andM25PE10are2Mbit(256Kb×8bit)and1Mbit(128Kb×8bit)SerialPagedFlashmemories,respectively.TheyareaccessedbyahighspeedSPI-compatiblebus. Thememoriescanbewrittenorprogrammed1to256Bytesatatime,usingthePageWriteorPageProgra

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

產品屬性

  • 產品編號:

    M25PE20-VMN6P

  • 制造商:

    Micron Technology Inc.

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    非易失

  • 存儲器格式:

    閃存

  • 技術:

    FLASH - NOR

  • 存儲容量:

    2Mb(256K x 8)

  • 存儲器接口:

    SPI

  • 寫周期時間 - 字,頁:

    15ms,3ms

  • 電壓 - 供電:

    2.7V ~ 3.6V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    8-SOIC(0.154",3.90mm 寬)

  • 供應商器件封裝:

    8-SO

  • 描述:

    IC FLASH 2MBIT SPI 75MHZ 8SO

供應商型號品牌批號封裝庫存備注價格
MICRON/美光
22+
NA
3000
支持任何機構檢測 只做原裝正品
詢價
MICRON/NUMONYX
2016+
SO8N
6528
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費送樣品!
詢價
Micron
17+
6200
詢價
ST/ Numony
23+
SO8N
5000
原裝正品,假一罰十
詢價
NUM
24+
6400
詢價
ST
20+
10000
全新現(xiàn)貨熱賣中歡迎查詢
詢價
MICRON/美光
24+
NA
20000
美光專營原裝正品
詢價
Micron Technology Inc.
21+
8-SO
56200
一級代理/放心采購
詢價
NUYX
24+
8SOIC
28500
授權代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
詢價
Micron
1942+
N/A
908
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詢價
更多M25PE20-VMN6P供應商 更新時間2024-12-24 16:31:00