M25PE80-VMN6TG中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

Description

The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus.

The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write

or Page Program instruction. The Page Write instruction consists of an integrated Page

Erase cycle followed by a Page Program cycle.

The memory is organized as 16 sectors that are further divided up into 16 subsectors each

(256 subsectors in total). Each sector contains 256 pages and each subsector contains 16 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 4096 pages, or 1 048 576 bytes.

Features

■ SPI bus compatible serial interface

■ 8-Mbit Page-Erasable Flash memory

■ Page size: 256 bytes

– Page Write in 11 ms (typical)

– Page Program in 0.8 ms (typical)

– Page Erase in 10 ms (typical)

■ SubSector Erase (4 Kbytes)

■ Sector Erase (64 Kbytes)

■ Bulk Erase (8 Mbits)

■ 2.7 V to 3.6 V single supply voltage

■ 50 MHz clock rate (maximum)

■ Deep Power-down mode 1 μA (typical)

■ Electronic Signature

– JEDEC standard two-byte signature(8014h)

■ Software Write Protection on a 64 Kbyte sector basis

■ Hardware Write Protection of the memory area selected using the BP0, BP1 and BP2 bits

■ More than 100 000 Write cycles

■ More than 20 year data retention

■ Packages

– ECOPACK? (RoHS compliant)