M27C160-100B1集成電路（IC）的存儲(chǔ)器規(guī)格書PDF中文資料

M27C160-100B1屬于集成電路（IC）的存儲(chǔ)器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的M27C160-100B1存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

DESCRIPTION

The M27C160 is a 16 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for micro processor systems requiring large data or program storage and is organised as either 2 Mbit words of 8 bit or 1 Mbit words of 16 bit. The pin-out is compatible with a 16 Mbit Mask ROM.

The FDIP42W (window ceramic frit-seal package) has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written rapidly to the device by following the programming procedure.

For applications where the content is programmed only one time and erasure is not required, the M27C160 is offered in PDIP42, SDIP42, PLCC44 and SO44 packages.

■ 5V ± 10 SUPPLY VOLTAGE in READ OPERATION

■ ACCESS TIME: 50ns

■ BYTE-WIDE or WORD-WIDE CONFIGURABLE

■ 16 Mbit MASK ROM REPLACEMENT

■ LOW POWER CONSUMPTION

– Active Current 70mA at 8MHz

– Standby Current 100μA

■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V

■ PROGRAMMING TIME: 50μs/word

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: B1h