M28256-12NS1T中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The M28256 and M28256-W devices consist of 32K x 8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V or 3V, depending on the option chosen).

■ Fast Access Time:

– 90 ns at VCC=5 V for M28256

– 120 ns at VCC=3 V for M28256-W

■ Single Supply Voltage:

– 4.5 V to 5.5 V for M28256

– 2.7 V to 3.6 V for M28256-W

■ Low Power Consumption

■ Fast BYTE and PAGE WRITE (up to 64 Bytes)

– 3 ms at VCC=4.5 V for M28256

– 5 ms at VCC=2.7 V for M28256-W

■ Enhanced Write Detection and Monitoring:

– Data Polling

– Toggle Bit

– Page Load Timer Status

■ JEDEC Approved Bytewide Pin-Out

■ Software Data Protection

■ 100,000 Erase/Write Cycles (minimum)

■ 10 Year Data Retention (minimum)