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M28F101-100P3中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

M28F101-100P3
廠(chǎng)商型號(hào)

M28F101-100P3

功能描述

1 Mb 128K x 8, Chip Erase FLASH MEMORY

文件大小

197.89 Kbytes

頁(yè)面數(shù)量

23 頁(yè)

生產(chǎn)廠(chǎng)商 STMicroelectronics
企業(yè)簡(jiǎn)稱(chēng)

STMICROELECTRONICS意法半導(dǎo)體

中文名稱(chēng)

意法半導(dǎo)體(ST)集團(tuán)官網(wǎng)

原廠(chǎng)標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2024-11-17 10:20:00

M28F101-100P3規(guī)格書(shū)詳情

DESCRIPTION

The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the

chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.

Features

? 5V±10 SUPPLY VOLTAGE

? 12V PROGRAMMING VOLTAGE

? FAST ACCESS TIME: 70ns

? BYTE PROGRAMING TIME: 10μs typical

? ELECTRICAL CHIP ERASE in 1s RANGE

? LOW POWER CONSUMPTION

– Stand-by Current: 100μA max

? 10,000 ERASE/PROGRAM CYCLES

? INTEGRATED ERASE/PROGRAM-STOP TIMER

? OTP COMPATIBLE PACKAGES and PINOUTS

? ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 07h

產(chǎn)品屬性

  • 型號(hào):

    M28F101-100P3

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱(chēng):

    STMicroelectronics

  • 功能描述:

    1 Mb 128K x 8, Chip Erase FLASH MEMORY

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