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M28F101-100P3中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書
M28F101-100P3規(guī)格書詳情
DESCRIPTION
The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the
chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
Features
? 5V±10 SUPPLY VOLTAGE
? 12V PROGRAMMING VOLTAGE
? FAST ACCESS TIME: 70ns
? BYTE PROGRAMING TIME: 10μs typical
? ELECTRICAL CHIP ERASE in 1s RANGE
? LOW POWER CONSUMPTION
– Stand-by Current: 100μA max
? 10,000 ERASE/PROGRAM CYCLES
? INTEGRATED ERASE/PROGRAM-STOP TIMER
? OTP COMPATIBLE PACKAGES and PINOUTS
? ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 07h
產(chǎn)品屬性
- 型號：
M28F101-100P3
- 制造商：
STMICROELECTRONICS
- 制造商全稱：
STMicroelectronics
- 功能描述：
1 Mb 128K x 8, Chip Erase FLASH MEMORY
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
9850 |
公司原裝現(xiàn)貨/隨時可以發(fā)貨 |
詢價 | |||
ST/意法 |
24+ |
PLCC |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ST |
DIP |
36900 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
STM |
23+ |
NA |
685 |
專做原裝正品,假一罰百! |
詢價 | ||
ST |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
ST |
23+ |
DIP |
16900 |
正規(guī)渠道,只有原裝! |
詢價 | ||
STM |
9916/9727 |
17 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | |||
ST/意法 |
22+ |
PLCC32 |
9000 |
原裝正品 |
詢價 | ||
ST |
22+ |
DIP |
16900 |
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持! |
詢價 | ||
24+ |
237 |
本站現(xiàn)庫存 |
詢價 |
