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M28F101-120XP6中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

M28F101-120XP6
廠商型號

M28F101-120XP6

功能描述

1 Mb 128K x 8, Chip Erase FLASH MEMORY

文件大小

197.89 Kbytes

頁面數(shù)量

23

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-1 17:08:00

M28F101-120XP6規(guī)格書詳情

DESCRIPTION

The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the

chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.

Features

? 5V±10 SUPPLY VOLTAGE

? 12V PROGRAMMING VOLTAGE

? FAST ACCESS TIME: 70ns

? BYTE PROGRAMING TIME: 10μs typical

? ELECTRICAL CHIP ERASE in 1s RANGE

? LOW POWER CONSUMPTION

– Stand-by Current: 100μA max

? 10,000 ERASE/PROGRAM CYCLES

? INTEGRATED ERASE/PROGRAM-STOP TIMER

? OTP COMPATIBLE PACKAGES and PINOUTS

? ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 07h

產(chǎn)品屬性

  • 型號:

    M28F101-120XP6

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    1 Mb 128K x 8, Chip Erase FLASH MEMORY

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
ST
原廠原封
36900
集團(tuán)化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
ST/意法
23+
NA
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價
ST
24+
PLCC32
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
ST/意法
22+
PLCC-32
3000
原裝正品,支持實單
詢價
ST
23+
PLCC
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
詢價
ST
23+
原廠原封
16900
正規(guī)渠道,只有原裝!
詢價
ST
24+
PLCC
3000
公司存貨
詢價
ST
22+
原廠原封
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
詢價
ST
2020+
PLCC32
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
ST
2022
PLCC
2340
全新原裝現(xiàn)貨
詢價