首頁>M28F101-90XP6>規(guī)格書詳情

M28F101-90XP6中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

M28F101-90XP6
廠商型號(hào)

M28F101-90XP6

功能描述

1 Mb 128K x 8, Chip Erase FLASH MEMORY

文件大小

197.89 Kbytes

頁面數(shù)量

23

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-26 22:58:00

M28F101-90XP6規(guī)格書詳情

DESCRIPTION

The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the

chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.

Features

? 5V±10 SUPPLY VOLTAGE

? 12V PROGRAMMING VOLTAGE

? FAST ACCESS TIME: 70ns

? BYTE PROGRAMING TIME: 10μs typical

? ELECTRICAL CHIP ERASE in 1s RANGE

? LOW POWER CONSUMPTION

– Stand-by Current: 100μA max

? 10,000 ERASE/PROGRAM CYCLES

? INTEGRATED ERASE/PROGRAM-STOP TIMER

? OTP COMPATIBLE PACKAGES and PINOUTS

? ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 07h

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
STM
2016+
TSSOP40
9000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
ST
24+
9850
公司原裝現(xiàn)貨/隨時(shí)可以發(fā)貨
詢價(jià)
ST
PLCC
36900
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價(jià)
ST
23+
QFP
3200
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售!
詢價(jià)
SONY
24+
SMD40
3000
公司存貨
詢價(jià)
ST
23+
PLCC44
9526
詢價(jià)
ST
22+
PLCC44
66900
原廠原裝現(xiàn)貨
詢價(jià)
ST
2020+
TSSOP
4500
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
STM
98+
TSOP
9000
原裝現(xiàn)貨海量庫存歡迎咨詢
詢價(jià)
STM
12+
NA
100
終端備貨原裝現(xiàn)貨-軍工器件供應(yīng)商
詢價(jià)