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M28F201-90K1TR中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

M28F201-90K1TR
廠商型號(hào)

M28F201-90K1TR

功能描述

2 Mb 256K x 8, Chip Erase FLASH MEMORY

文件大小

179.07 Kbytes

頁面數(shù)量

21

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-29 8:41:00

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M28F201-90K1TR規(guī)格書詳情

DESCRIPTION

The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor interface. The M28F201 FLASH Memory product is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.

■ 5V ± 10 SUPPLY VOLTAGE

■ 12V PROGRAMMING VOLTAGE

■ FAST ACCESS TIME: 70ns

■ BYTE PROGRAMMING TIME: 10μs typical

■ ELECTRICAL CHIP ERASE in 1s RANGE

■ LOW POWER CONSUMPTION

– Active Current: 15mAtypical

– Stand-by Current: 10μA typical

■ 10,000 PROGRAM/ERASE CYCLES

■ INTEGRATED ERASE/PROGRAM-STOP TIMER

■ OTP COMPATIBLE PACKAGES and PINOUTS

■ ELECTRONIC SIGNATURE

– ManufacturerCode: 20h

– Device Code: F4h

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ST
24+
SOP
6980
原裝現(xiàn)貨,可開13%稅票
詢價(jià)
ST
17+
PLCC-28
6200
100%原裝正品現(xiàn)貨
詢價(jià)
ST
21+
PLCC-28
23480
詢價(jià)
ST
18+
SOP
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價(jià)
ST
23+
TSOP-32
16900
正規(guī)渠道,只有原裝!
詢價(jià)
ST
23+
SOP
3700
絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購(gòu)!
詢價(jià)
ST
25+
TSOP-32
16900
原裝,請(qǐng)咨詢
詢價(jià)
ST/意法
24+
NA/
430
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價(jià)
ST
99+
PLCC-28
4904
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
ST
23+
SOP-44
3200
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售!
詢價(jià)