M28F256-12XC6TR中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F512 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 90ns makes the device suitable for use in high speed microprocessor systems.

■ FAST ACCESS TIME: 90ns

■ LOW POWER CONSUMPTION

– Standby Current: 100μA Max

■ 10,000 ERASE/PROGRAM CYCLES

■ 12V PROGRAMMING VOLTAGE

■ TYPICAL BYTE PROGRAMING TIME 10μs (PRESTO F ALGORITHM)

■ ELECTRICAL CHIP ERASE in 1s RANGE

■ INTEGRATED ERASE/PROGRAM-STOP TIMER

■ EXTENDED TEMPERATURE RANGES