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M28F256-20XC3TR中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

M28F256-20XC3TR
廠商型號

M28F256-20XC3TR

功能描述

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

文件大小

523.409 Kbytes

頁面數(shù)量

20

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-21 12:04:00

M28F256-20XC3TR規(guī)格書詳情

DESCRIPTION

The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F512 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 90ns makes the device suitable for use in high speed microprocessor systems.

■ FAST ACCESS TIME: 90ns

■ LOW POWER CONSUMPTION

– Standby Current: 100μA Max

■ 10,000 ERASE/PROGRAM CYCLES

■ 12V PROGRAMMING VOLTAGE

■ TYPICAL BYTE PROGRAMING TIME 10μs (PRESTO F ALGORITHM)

■ ELECTRICAL CHIP ERASE in 1s RANGE

■ INTEGRATED ERASE/PROGRAM-STOP TIMER

■ EXTENDED TEMPERATURE RANGES

產(chǎn)品屬性

  • 型號:

    M28F256-20XC3TR

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    512 Kbit(64Kb x8 Bulk Erase)Flasxh Memory

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