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M28W160BB100-NT中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

M28W160BB100-NT
廠商型號

M28W160BB100-NT

功能描述

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

文件大小

337.77 Kbytes

頁面數(shù)量

45

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-10 17:20:00

M28W160BB100-NT規(guī)格書詳情

SUMMARY DESCRIPTION

The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

The device features an asymmetrical blocked architecture. The M28W160B has an array of 39 blocks: 8 Parameter Blocks of 4 KWord and 31 Main Blocks of 32 KWord. M28W160BT has the Parameter Blocks at the top of the memory address space while the M28W160BB locates the Parameter Blocks starting from the bottom. The memory maps are shown in Figure 6, Block Addresses.

Parameter blocks 0 and 1 can be protected from accidental programming or erasure. Each block can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles.

Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDD = 2.7V to 3.6V Core Power Supply

– VDDQ= 1.65V to 3.6V for Input/Output

– VPP = 12V for fast Program (optional)

■ ACCESS TIME: 70, 85, 90,100ns

■ PROGRAMMING TIME

– 10μs typical

– Double Word Programming Option

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

■ BLOCK PROTECTION on TWO PARAMETER BLOCKS

– WP for Block Protection

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M28W160BT: 90h

– Bottom Device Code, M28W160BB: 91h

產(chǎn)品屬性

  • 型號:

    M28W160BB100-NT

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory

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