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M28W160CB100ZB1中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

M28W160CB100ZB1
廠商型號(hào)

M28W160CB100ZB1

功能描述

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

文件大小

1.02234 Mbytes

頁面數(shù)量

50

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體(ST)集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二原廠數(shù)據(jù)手冊到原廠下載

更新時(shí)間

2024-11-15 23:03:00

M28W160CB100ZB1規(guī)格書詳情

SUMMARY DESCRIPTION

The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDD = 2.7V to 3.6V Core Power Supply

– VDDQ= 1.65V to 3.6V for Input/Output

– VPP = 12V for fast Program (optional)

■ ACCESS TIME: 70, 85, 90,100ns

■ PROGRAMMING TIME:

– 10μs typical

– Double Word Programming Option

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

■ BLOCK LOCKING

– All blocks locked at Power Up

– Any combination of blocks can be locked

– WP for Block Lock-Down

■ SECURITY

– 64 bit user Programmable OTP cells

– 64 bit unique device identifier

– One Parameter Block Permanently Lockable

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ECOPACK? PACKAGES AVAILABLE

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

產(chǎn)品屬性

  • 型號(hào):

    M28W160CB100ZB1

  • 制造商:

    NUMONYX

  • 制造商全稱:

    Numonyx B.V

  • 功能描述:

    16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory

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