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M28W160CB70ZB1T中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

M28W160CB70ZB1T
廠商型號(hào)

M28W160CB70ZB1T

功能描述

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

文件大小

1.02234 Mbytes

頁(yè)面數(shù)量

50 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體(ST)集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二原廠數(shù)據(jù)手冊(cè)到原廠下載

更新時(shí)間

2024-11-16 8:36:00

M28W160CB70ZB1T規(guī)格書詳情

SUMMARY DESCRIPTION

The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDD = 2.7V to 3.6V Core Power Supply

– VDDQ= 1.65V to 3.6V for Input/Output

– VPP = 12V for fast Program (optional)

■ ACCESS TIME: 70, 85, 90,100ns

■ PROGRAMMING TIME:

– 10μs typical

– Double Word Programming Option

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

■ BLOCK LOCKING

– All blocks locked at Power Up

– Any combination of blocks can be locked

– WP for Block Lock-Down

■ SECURITY

– 64 bit user Programmable OTP cells

– 64 bit unique device identifier

– One Parameter Block Permanently Lockable

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ECOPACK? PACKAGES AVAILABLE

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

產(chǎn)品屬性

  • 型號(hào):

    M28W160CB70ZB1T

  • 制造商:

    NUMONYX

  • 制造商全稱:

    Numonyx B.V

  • 功能描述:

    16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory

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