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M28W160CT70ZB6T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M28W160CT70ZB6T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYX

numonyx

M28W160CT70ZB6

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYX

numonyx

M28W160CT70ZB6

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M28W160CT70ZB6E

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M28W160CT70ZB6E

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYX

numonyx

M28W160CT70ZB6F

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M28W160CT70ZB6F

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYX

numonyx

M28W160CT70ZB6S

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYX

numonyx

M28W160CT70ZB6S

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M28W160CT70ZB6U

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYX

numonyx

M28W160CT70ZB6U

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

詳細參數(shù)

  • 型號:

    M28W160CT70ZB6T

  • 功能描述:

    閃存 16M(1Mx16) 70ns

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 數(shù)據(jù)總線寬度:

    1 bit

  • 存儲類型:

    Flash

  • 存儲容量:

    2 MB

  • 結(jié)構(gòu):

    256 K x 8

  • 接口類型:

    SPI

  • 電源電壓-最大:

    3.6 V

  • 電源電壓-最?。?/span>

    2.3 V

  • 最大工作電流:

    15 mA

  • 工作溫度:

    - 40 C to + 85 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝:

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
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2020+
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80000
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MICRON
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893993
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6000
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23+
BGA48
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
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23+
BGA48
1790
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MICRON
23+
BGA48
10000
原裝正品現(xiàn)貨
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24+
3000
公司存貨
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ST
22+
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2789
全新原裝自家現(xiàn)貨!價格優(yōu)勢!
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更多M28W160CT70ZB6T供應(yīng)商 更新時間2024-11-16 9:20:00