M28W320CB100ZB6T中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The M28W320C is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by Word basis. The device is offered in the TSOP48 (10 x 20mm) and the μBGA47, 0.75mm ball pitch packages. When shipped, all bits of the M28W320C are in the 1 state.

■ SUPPLY VOLTAGE

– VDD = 2.7V to 3.6V: for Program, Erase and Read

– VDDQ = 1.65V or 2.7V: Input/Output option

– VPP = 12V: optional Supply Voltage for fast Program

■ ACCESS TIME

– 2.7V to 3.6V: 90ns

– 2.7V to 3.6V: 100ns

■ PROGRAMMING TIME:

– 10μs typical

– Double Word Programming Option

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

■ COMMON FLASH INTERFACE

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

■ BLOCK PROTECTION UNPROTECTION

– All Blocks protected at Power Up

– Any combination of blocks can be protected

– WP for block locking

■ SECURITY

– 64-bit user Programmable OTP cells

– 64-bit unique device identifier

– One Parameter Block Permanently Lockable

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS of DATA RETENTION

– Defectivity below 1ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M28W320CT: 88BAh

– Bottom Device Code, M28W320CB: 88BBh