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M28W320ECT70ZB6E中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

M28W320ECT70ZB6E
廠商型號

M28W320ECT70ZB6E

功能描述

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件大小

832.92 Kbytes

頁面數(shù)量

53

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體(ST)集團官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二原廠數(shù)據(jù)手冊到原廠下載

更新時間

2024-11-16 22:59:00

M28W320ECT70ZB6E規(guī)格書詳情

SUMMARY DESCRIPTION

The M28W320EC is a 32 Mbit (2 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDD = 2.7V to 3.6V Core Power Supply

– VDDQ= 1.65V to 3.6V for Input/Output

– VPP = 12V for fast Program (optional)

■ ACCESS TIME: 70, 85, 90,100ns

■ PROGRAMMING TIME:

– 10μs typical

– Double Word Programming Option

– Quadruple Word Programming Option

■ COMMON FLASH INTERFACE

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

■ BLOCK LOCKING

– All blocks locked at Power Up

– Any combination of blocks can be locked

– WP for Block Lock-Down

■ SECURITY

– 128 bit user Programmable OTP cells

– 64 bit unique device identifier

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M28W320ECT: 88BAh

– Bottom Device Code, M28W320ECB: 88BBh

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
ST/意法
23+
NA/
3353
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9000
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899933
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Numonyx-ADIVISIONOFMICRO
2022
ICFLASH32MBIT70NS47TFBGA
5058
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Numonyx/STMi
23+
47-TFBGA
65480
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MICRON/美光
23+
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98900
原廠原裝正品現(xiàn)貨!!
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Micron Technology Inc
23+/24+
47-TFBGA
8600
只供原裝進口公司現(xiàn)貨+可訂貨
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23+
BGA
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
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SGS
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1046
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