M28W640ECB10N6E中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

SUMMARY DESCRIPTION

The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDD = 2.7V to 3.6V Core Power Supply

– VDDQ= 1.65V to 3.6V for Input/Output

– VPP = 12V for fast Program (optional)

■ ACCESS TIME: 70, 85, 90,100ns

■ PROGRAMMING TIME:

– 10μs typical

– Double Word Programming Option

– Quadruple Word Programming Option

■ COMMON FLASH INTERFACE

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

■ BLOCK LOCKING

– All blocks locked at Power Up

– Any combination of blocks can be locked

– WP for Block Lock-Down

■ SECURITY

– 128 bit user Programmable OTP cells

– 64 bit unique device identifier

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M28W640ECT: 8848h

– Bottom Device Code, M28W640ECB: 8849h