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M28W800CT

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M28W800CT100N1T

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M28W800CT100N6T

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M28W800CT100ZB1T

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M28W800CT100ZB6T

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M28W800CT70N1T

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M28W800CT70N6T

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M28W800CT70ZB1T

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M28W800CT70ZB6T

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M28W800CT85N1T

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M28W800CT85N6T

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M28W800CT85ZB1T

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M28W800CT85ZB6T

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M28W800CT90N1T

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M28W800CT90N6T

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M28W800CT90ZB1T

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M28W800CT90ZB6T

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W800Cisa8Mbit(512Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

詳細參數(shù)

  • 型號:

    M28W800CT

  • 功能描述:

    閃存 8M(512Kx16) 70ns

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 數(shù)據(jù)總線寬度:

    1 bit

  • 存儲類型:

    Flash

  • 存儲容量:

    2 MB

  • 結構:

    256 K x 8

  • 接口類型:

    SPI

  • 電源電壓-最大:

    3.6 V

  • 電源電壓-最?。?/span>

    2.3 V

  • 最大工作電流:

    15 mA

  • 工作溫度:

    - 40 C to + 85 C

  • 安裝風格:

    SMD/SMT

  • 封裝:

    Reel

供應商型號品牌批號封裝庫存備注價格
ST
24+
TSOP
1040
詢價
ST
2020+
QFN
1787
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
ST
24+
TSOP
6980
原裝現(xiàn)貨,可開13%稅票
詢價
ST
2339+
TSOP
5632
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
詢價
ST
22+
BGA-M46P
4897
絕對原裝!現(xiàn)貨熱賣!
詢價
ST
23+
TSOP
5000
原裝正品,假一罰十
詢價
ST
24+
QFN
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價
ST
22+23+
BGA
34171
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
ST
18+
TSOP
85600
保證進口原裝可開17%增值稅發(fā)票
詢價
STM
三年內
1983
納立只做原裝正品13590203865
詢價
更多M28W800CT供應商 更新時間2024-11-16 15:30:00