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M29DW128F60ZA1T

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

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M29DW128F60ZA1T

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M29DW128F60ZA1T

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

NUMONYX

numonyx

M29DW128F60ZA1

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

NUMONYX

numonyx

M29DW128F60ZA1

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M29DW128F60ZA1

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M29DW128F60ZA1E

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M29DW128F60ZA1E

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M29DW128F60ZA1E

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

NUMONYX

numonyx

M29DW128F60ZA1F

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M29DW128F60ZA1F

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

NUMONYX

numonyx

M29DW128F60ZA1F

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    M29DW128F60ZA1T

  • 制造商：

    NUMONYX

  • 制造商全稱：

    Numonyx B.V

  • 功能描述：

    128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
16+
BGA
2500
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
 詢價(jià)
ST
2023+
BGA
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
ST
24+
BGA
35200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
ST
22
BGA
25000
3月31原裝,微信報(bào)價(jià)
 詢價(jià)
ST
BGA
893993
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價(jià)
ST
23+
BGA
25000
原廠/代理渠道 價(jià)格優(yōu)勢(shì)
 詢價(jià)
ST
24+
BGA
6500
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
ST
25+
BGA
25000
全新原裝現(xiàn)貨 假一賠十
 詢價(jià)
MICRON
1844+
BGA
6528
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
Micron Technology Inc.
21+
60-TFBGA
5280
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
 詢價(jià)
更多M29DW128F60ZA1T供應(yīng)商 更新時(shí)間2025-1-1 15:14:00

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