M29DW324DB70N6T中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

SUMMARY DESCRIPTION

The M29DW324D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VCC = 2.7V to 3.6V for Program, Erase and Read

– VPP =12V for Fast Program (optional)

■ ACCESS TIME: 70, 90ns

■ PROGRAMMING TIME

– 10μs per Byte/Word typical

– Double Word/ Quadruple Byte Program

■ MEMORY BLOCKS

– Dual Bank Memory Array: 16Mbit+16Mbit

– Parameter Blocks (Top or Bottom Location)

■ DUAL OPERATIONS

– Read in one bank while Program or Erase in other

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ VPP/WP PIN for FAST PROGRAM and WRITE PROTECT

■ TEMPORARY BLOCK UNPROTECTION MODE

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ EXTENDED MEMORY BLOCK

– Extra block used as security block or to store additional information

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29DW324DT: 225Ch

– Bottom Device Code M29DW324DB: 225Dh