M29DW640D70N6T中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Family Overview

? Densities from 32Mb to 64Mb

? 0.15μm process technology

? Wide application area covered

? technology shrink on going

? higher densities

? improved performances

? Increased reliability

Main Features

? 32Mb (4Mbx8 / 2Mbx16), Boot Block

? Access Time

? 70, 90ns

? Supply Voltage

? Vcc = 2.7V to 3.6V for Program, Erase and Read

? Vpp = 12V for fast Program (optional)

? Programming Time

? 10μs per Byte/Word typical

? Double Word / Quadruple Byte Program

? Low Power Consumption

? Standby and Automatic Standby

? Dual Operations:

? Read in one bank or group of banks while Program or Erase in the other