M29F040-120XN3R中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte.

■ M29F040 is replaced by the M29F040B

■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM,

ERASE and READ OPERATIONS

■ FAST ACCESS TIME: 70ns

■ BYTE PROGRAMMING TIME: 10μs typical

■ ERASE TIME

– Block: 1.0 sec typical

– Chip: 2.5 sec typical

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte

– Data Polling and Toggle bits Protocol for

P/E.C. Status

■ MEMORY ERASE in BLOCKS

– 8 Uniform Blocks of 64 KBytes each

– Block Protection

– Multiblock Erase

■ ERASE SUSPEND and RESUME MODES

■ LOW POWER CONSUMPTION

– Read mode: 8mA typical (at 12MHz)

– Stand-by mode: 25μA typical

– Automatic Stand-by mode

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E2h