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M29F040B90N3T中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

M29F040B90N3T
廠商型號

M29F040B90N3T

功能描述

4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory

文件大小

190.45 Kbytes

頁面數(shù)量

21

生產廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導體

中文名稱

意法半導體集團官網

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-3-12 22:50:00

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M29F040B90N3T規(guī)格書詳情

SUMMARY DESCRIPTION

The M29F040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed us ing a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F040B is fully backward compatible with the M29F040.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.

They allow simple connection to most microprocessors, often without additional logic.

The memory is offered in TSOP32 (8 x 20mm), PLCC32 and PDIP32 packages and it is supplied with all the bits erased (set to ‘1’).

■ SINGLE 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45ns

■ PROGRAMMING TIME

– 8 μs per Byte typical

■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E2h

產品屬性

  • 型號:

    M29F040B90N3T

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    4 Mbit(512Kb x8, Uniform Block) Single Supply Flash Memory

供應商 型號 品牌 批號 封裝 庫存 備注 價格
ST
23+
TSSOP32
20000
全新原裝假一賠十
詢價
ST
03+
TSOP32
21
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
ST
04+
TSSOP32
3560
全新原裝進口自己庫存優(yōu)勢
詢價
ST
24+
TSOP
20000
全新原廠原裝,進口正品現(xiàn)貨,正規(guī)渠道可含稅?。?/div>
詢價
ST
20+
DIP
67500
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
ST
23+
QFP
3200
全新原裝、誠信經營、公司現(xiàn)貨銷售!
詢價
MICRON
三年內
1983
只做原裝正品
詢價
ST
22+23+
DIP
69164
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
詢價
ST/意法
23+
NA/
21
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
ST
2025+
TSOP32
3565
全新原廠原裝產品、公司現(xiàn)貨銷售
詢價