M29F080D55N1T中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

SUMMARY DESCRIPTION

The M29F080D is a 8 Mbit (1Mb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VCC = 5V ±10 for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 55, 70, 90ns

■ PROGRAMMING TIME

– 10μs per Byte typical

■ 16 UNIFORM 64Kbyte MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithms

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY BLOCK UNPROTECTION MODE

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: F1h

■ ECOPACK? PACKAGES AVAILABLE