M29F100T-120M6TR中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ FAST ACCESS TIME: 70ns

■ FAST PROGRAMMING TIME

– 10μs by Byte / 16μs by Word typical

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte or Word-by-Word

– Status Register bits and Ready/Busy Output

■ MEMORY BLOCKS

– Boot Block (Top or Bottom location)

– Parameter and Main blocks

■ BLOCK, MULTI-BLOCK and CHIP ERASE

■ MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ LOW POWER CONSUMPTION

– Stand-byand Automatic Stand-by

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATARETENTION

– Defectivity below 1ppm/year

■ ELECTRONIC SIGNATURE

– ManufacturerCode: 0020h

– Device Code, M29F100T: 00D0h

– Device Code, M29F100B: 00D1h