M29F200BT55N3T中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Description

The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F200B is fully backward compatible with the M29F200.

Features

■ Single 5V±10 supply voltage for Program, Erase and Read operations

■ Access time: 45, 50, 70, 90ns

■ Programming time

– 8μs per Byte/Word typical

■ 7 memory blocks

– 1 Boot Block (Top or Bottom location)

– 2 parameter and 4 main blocks

■ Program/Erase controller

– Embedded Byte/Word Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register polling and toggle bits

– Ready/Busy output pin

■ Erase Suspend and Resume modes

– Read and Program another block during Erase Suspend

■ Unlock Bypass Program command

– Faster Production/Batch Programming

■ Temporary Block Unprotection mode

■ Low power consumption

– Standby and Automatic Standby

■ 100,000 Program/Erase cycles per block

■ 20 years data retention

– Defectivity below 1 ppm/year

■ Electronic Signature

– Manufacturer code: 0020h

– Top Device code M29F200BT: 00D3h

– Bottom Device code: M29F200BB: 00D4h

■ ECOPACK? packages available