M29W008EB90N6E中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Summary description

The M29W008E is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at block, multi-block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed using standard programming equipment.

FEATURES SUMMARY

■ ACCESS TIMES: 70ns, 90ns

■ PROGRAMMING TIME: 10μs per Byte typical

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Embedded Byte Program Algorithm

– Status Register bits and Ready/Busy Output

■ 19 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom location)

– 2 Parameter and 16 Main Blocks

■ BLOCK, MULTI-BLOCK and CHIP ERASE

■ MULTIPLE BLOCK PROTECTION/ TEMPORARY UNPROTECTION MODE

■ ERASE SUSPEND and RESUME MODES

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby modes

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– M29W008ET Device Code: D2h

– M29W008EB Device Code: DCh

■ ECOPACK? TSOP40 PACKAGE