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M29W010B45K6中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
M29W010B45K6 |
| 功能描述 | 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| 文件大小 |
406.89 Kbytes |
| 頁面數(shù)量 |
19 頁 |
| 生產(chǎn)廠商 | STMicroelectronics |
| 企業(yè)簡稱 |
STMICROELECTRONICS【意法半導(dǎo)體】 |
| 中文名稱 | 意法半導(dǎo)體集團官網(wǎng) |
| 原廠標識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-3-30 8:30:00 |
| 人工找貨 | M29W010B45K6價格和庫存，歡迎聯(lián)系客服免費人工找貨 |
M29W010B45K6規(guī)格書詳情
SUMMARY DESCRIPTION
The M29W010B is a 1 Mbit (128Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 45ns
■ PROGRAMMING TIME
– 10μs by Byte typical
■ 8 UNIFORM 16 Kbyte MEMORY BLOCKS
■ PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 23h
■ ECOPACK? PACKAGES AVAILABLE
