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M29W010B70K3中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

M29W010B70K3
廠商型號

M29W010B70K3

功能描述

1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

文件大小

406.89 Kbytes

頁面數(shù)量

19

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體(ST)集團(tuán)官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二原廠數(shù)據(jù)手冊到原廠下載

更新時間

2024-11-16 11:50:00

M29W010B70K3規(guī)格書詳情

SUMMARY DESCRIPTION

The M29W010B is a 1 Mbit (128Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45ns

■ PROGRAMMING TIME

– 10μs by Byte typical

■ 8 UNIFORM 16 Kbyte MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 23h

■ ECOPACK? PACKAGES AVAILABLE

產(chǎn)品屬性

  • 型號:

    M29W010B70K3

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

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