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M29W040-120N6TR中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

M29W040-120N6TR
廠商型號(hào)

M29W040-120N6TR

功能描述

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

文件大小

205.6 Kbytes

頁(yè)面數(shù)量

31 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱(chēng)

STMICROELECTRONICS意法半導(dǎo)體

中文名稱(chēng)

意法半導(dǎo)體(ST)集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二原廠數(shù)據(jù)手冊(cè)到原廠下載

更新時(shí)間

2024-11-16 18:35:00

M29W040-120N6TR規(guī)格書(shū)詳情

DESCRIPTION

The M29W040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte.

The interface is directly compatible with most microprocessors. PLCC32, TSOP32(8 x 20mm)and TSOP32 (8 x 14mm) packages are available. Both normal and reverse pin outs are available for the TSOP32 (8 x 20mm) package.

■ M29W040 is replaced by the M29W040B

■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ FAST ACCESS TIME: 100ns

■ BYTE PROGRAMMING TIME: 12μs typical

■ ERASE TIME

– Block: 1.5 sec typical

– Chip: 2.5 sec typical

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte

– Data Polling and Toggle bits Protocol for P/E.C. Status

■ MEMORY ERASE in BLOCKS

– 8 Uniform Blocks of 64 KBytes each

– Block Protection

– Multiblock Erase

■ ERASE SUSPEND and RESUME MODES

■ LOW POWER CONSUMPTION

– Read mode: 8mA typical (at 12MHz)

– Stand-by mode: 20μA typical

– Automatic Stand-by mode

■ POWER DOWN SOFTWARE COMMAND

– Power-down mode: 1μA typical

■ 100,000PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E3h

產(chǎn)品屬性

  • 型號(hào):

    M29W040-120N6TR

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱(chēng):

    STMicroelectronics

  • 功能描述:

    4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

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