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M29W160DT70ZA6T中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

M29W160DT70ZA6T
廠商型號(hào)

M29W160DT70ZA6T

功能描述

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

文件大小

256.66 Kbytes

頁(yè)面數(shù)量

42 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體(ST)集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二原廠數(shù)據(jù)手冊(cè)到原廠下載

更新時(shí)間

2024-11-16 18:52:00

M29W160DT70ZA6T規(guī)格書詳情

SUMMARY DESCRIPTION

The M29W160D is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

FEATURES SUMMARY

■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 70ns

■ PROGRAMMING TIME

– 10μs per Byte/Word typical

■ 35 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 32 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Program and Erase algorithms

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY BLOCK UNPROTECTION MODE

■ SECURITY MEMORY BLOCK

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W160DT: 22C4h

– Bottom Device Code M29W160DB: 2249h

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2020+
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16800
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6528
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ST
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93480
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19889
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ST/意法
22+
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3000
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ST
2022
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8800
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18+
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19771
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2001
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18
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5000
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