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M29W640FT70ZA6E中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書
廠商型號 |
M29W640FT70ZA6E |
參數(shù)屬性 | M29W640FT70ZA6E 封裝/外殼為48-TFBGA;包裝為托盤;類別為集成電路(IC) > 存儲器;產(chǎn)品描述:IC FLASH 64MBIT PARALLEL 48TFBGA |
功能描述 | 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory |
文件大小 |
478.8 Kbytes |
頁面數(shù)量 |
72 頁 |
生產(chǎn)廠商 | STMicroelectronics |
企業(yè)簡稱 |
STMICROELECTRONICS【意法半導體】 |
中文名稱 | 意法半導體(ST)集團官網(wǎng) |
原廠標識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2024-11-15 23:03:00 |
M29W640FT70ZA6E規(guī)格書詳情
Summary description
The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in units of 256 KByte (generally groups of four 64 KByte blocks), to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Features summary
■ Supply Voltage
– VCC = 2.7V to 3.6V for Program, Erase, Read
– VPP =12 V for Fast Program (optional)
■ Asynchronous Random/Page Read
– Page Width: 4 Words
– Page Access: 25ns
– Random Access: 60ns, 70ns
■ Programming Time
– 10 μs per Byte/Word typical
– 4 Words/8 Bytes Program
■ 135 memory blocks
– 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location)
– 127 Main Blocks, 64 KBytes each
■ Program/Erase Controller
– Embedded Byte/Word Program algorithms
■ Program/Erase Suspend and Resume
– Read from any Block during Program Suspend
– Read and Program another Block during Erase Suspend
■ Unlock Bypass Program command
– Faster Production/Batch Programming
■ VPP/WP pin for Fast Program and Write Protect
■ Temporary Block Unprotection mode
■ Common Flash Interface
– 64-bit Security Code
■ Extended Memory Block
– Extra block used as security block or to store additional information
■ Low power consumption
– Standby and Automatic Standby
■ 100,000 Program/Erase cycles per block
產(chǎn)品屬性
- 產(chǎn)品編號:
M29W640FT70ZA6E
- 制造商:
Micron Technology Inc.
- 類別:
集成電路(IC) > 存儲器
- 包裝:
托盤
- 存儲器類型:
非易失
- 存儲器格式:
閃存
- 技術:
FLASH - NOR
- 存儲容量:
64Mb(8M x 8,4M x 16)
- 存儲器接口:
并聯(lián)
- 寫周期時間 - 字,頁:
70ns
- 電壓 - 供電:
2.7V ~ 3.6V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
48-TFBGA
- 供應商器件封裝:
48-TFBGA(6x8)
- 描述:
IC FLASH 64MBIT PARALLEL 48TFBGA
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Micron |
1844+ |
BGA |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
ST/意法 |
23+ |
NA/ |
3330 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
MICRON/美光 |
24+ |
NA |
20000 |
美光專營原裝正品 |
詢價 | ||
ST/意法 |
2048+ |
BGA |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
Micron Technology Inc. |
21+ |
48-TFBGA(6x8) |
56200 |
一級代理/放心采購 |
詢價 | ||
Micron |
21+ |
48TFBGA (6x8) |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
ST/意法 |
2022 |
BGA |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
Micron Technology Inc |
23+/24+ |
48-TFBGA |
8600 |
只供原裝進口公司現(xiàn)貨+可訂貨 |
詢價 | ||
ST |
22+23+ |
BGA |
16517 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
MICRON |
21+ |
BGA/TSOP |
50000 |
特價來襲!美光一級代理入駐114電子網(wǎng) |
詢價 |