M2V56S40ATP-6中文資料三菱電機數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz (-7/-8) , 133MHz (-6), and are suitable for main memory or graphic memory in computer systems

FEATURES

- Single 3.3v±0.3V power supply

- Max. Clock frequency 100MHz(-7/-8), 133MHz (-6)

- Fully Synchronous operation referenced to clock rising edge

- Single Data Rate

- 4 bank operation controlled by BA0, BA1 (Bank Address)

- /CAS latency- 2/3 (programmable)

- Burst length- 1/2/4/8/full page (programmable)

- Burst type- sequential / interleave (programmable)

- Random column access

- Auto precharge / All bank precharge controlled by A10

- 8192 refresh cycles /64ms (4 banks concurrent refresh)

- Auto refresh and Self refresh

- Row address A0-12 / Column address A0-9,11(x4)/ A0-9(x8)/ A0-8(x16)

- LVTTL Interface

- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch