首頁 >M3004316045NX0PBCR>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
M3004316045NX0PBCR | Parallel MRAM Memory x16 Features ?Interface ?ParallelAsynchronousx16 ?Technology ?40nmpMTJSTT-MRAM ?DataRetention(seeTable16.Endurance andDataRetentionDensity) ?4Mb,8Mb,16Mb,32Mb ?OperatingVoltageRange ?VCC:2.70V–3.60V ?OperatingTemperatureRange ?Industrial:-40°Cto85°C ?Ind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
ParallelMRAMMemoryx16 Features ?Interface ?ParallelAsynchronousx16 ?Technology ?40nmpMTJSTT-MRAM ?DataRetention(seeTable16.Endurance andDataRetentionDensity) ?4Mb,8Mb,16Mb,32Mb ?OperatingVoltageRange ?VCC:2.70V–3.60V ?OperatingTemperatureRange ?Industrial:-40°Cto85°C ?Ind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ParallelMRAMMemoryx16 Features ?Interface ?ParallelAsynchronousx16 ?Technology ?40nmpMTJSTT-MRAM ?DataRetention(seeTable16.Endurance andDataRetentionDensity) ?4Mb,8Mb,16Mb,32Mb ?OperatingVoltageRange ?VCC:2.70V–3.60V ?OperatingTemperatureRange ?Industrial:-40°Cto85°C ?Ind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ParallelMRAMMemoryx16 Features ?Interface ?ParallelAsynchronousx16 ?Technology ?40nmpMTJSTT-MRAM ?DataRetention(seeTable16.Endurance andDataRetentionDensity) ?4Mb,8Mb,16Mb,32Mb ?OperatingVoltageRange ?VCC:2.70V–3.60V ?OperatingTemperatureRange ?Industrial:-40°Cto85°C ?Ind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ParallelMRAMMemoryx16 Features ?Interface ?ParallelAsynchronousx16 ?Technology ?40nmpMTJSTT-MRAM ?DataRetention(seeTable16.Endurance andDataRetentionDensity) ?4Mb,8Mb,16Mb,32Mb ?OperatingVoltageRange ?VCC:2.70V–3.60V ?OperatingTemperatureRange ?Industrial:-40°Cto85°C ?Ind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ParallelMRAMMemoryx16 Features ?Interface ?ParallelAsynchronousx16 ?Technology ?40nmpMTJSTT-MRAM ?DataRetention(seeTable16.Endurance andDataRetentionDensity) ?4Mb,8Mb,16Mb,32Mb ?OperatingVoltageRange ?VCC:2.70V–3.60V ?OperatingTemperatureRange ?Industrial:-40°Cto85°C ?Ind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ParallelMRAMMemoryx16 Features ?Interface ?ParallelAsynchronousx16 ?Technology ?40nmpMTJSTT-MRAM ?DataRetention(seeTable16.Endurance andDataRetentionDensity) ?4Mb,8Mb,16Mb,32Mb ?OperatingVoltageRange ?VCC:2.70V–3.60V ?OperatingTemperatureRange ?Industrial:-40°Cto85°C ?Ind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ParallelMRAMMemoryx16 Features ?Interface ?ParallelAsynchronousx16 ?Technology ?40nmpMTJSTT-MRAM ?DataRetention(seeTable16.Endurance andDataRetentionDensity) ?4Mb,8Mb,16Mb,32Mb ?OperatingVoltageRange ?VCC:2.70V–3.60V ?OperatingTemperatureRange ?Industrial:-40°Cto85°C ?Ind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ParallelMRAMMemoryx16 Features ?Interface ?ParallelAsynchronousx16 ?Technology ?40nmpMTJSTT-MRAM ?DataRetention(seeTable16.Endurance andDataRetentionDensity) ?4Mb,8Mb,16Mb,32Mb ?OperatingVoltageRange ?VCC:2.70V–3.60V ?OperatingTemperatureRange ?Industrial:-40°Cto85°C ?Ind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ParallelMRAMMemoryx16 Features ?Interface ?ParallelAsynchronousx16 ?Technology ?40nmpMTJSTT-MRAM ?DataRetention(seeTable16.Endurance andDataRetentionDensity) ?4Mb,8Mb,16Mb,32Mb ?OperatingVoltageRange ?VCC:2.70V–3.60V ?OperatingTemperatureRange ?Industrial:-40°Cto85°C ?Ind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ParallelMRAMMemoryx16 Features ?Interface ?ParallelAsynchronousx16 ?Technology ?40nmpMTJSTT-MRAM ?DataRetention(seeTable16.Endurance andDataRetentionDensity) ?4Mb,8Mb,16Mb,32Mb ?OperatingVoltageRange ?VCC:2.70V–3.60V ?OperatingTemperatureRange ?Industrial:-40°Cto85°C ?Ind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ParallelMRAMMemoryx16 Features ?Interface ?ParallelAsynchronousx16 ?Technology ?40nmpMTJSTT-MRAM ?DataRetention(seeTable16.Endurance andDataRetentionDensity) ?4Mb,8Mb,16Mb,32Mb ?OperatingVoltageRange ?VCC:2.70V–3.60V ?OperatingTemperatureRange ?Industrial:-40°Cto85°C ?Ind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Renesas Electronics Corporatio |
23+/24+ |
484-BGA |
8600 |
只供原裝進口公司現貨+可訂貨 |
詢價 | ||
RENESAS(瑞薩電子) |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
TI |
24+ |
DIP-40 |
200 |
詢價 | |||
TI |
22+ |
DIP |
10000 |
原裝正品優(yōu)勢現貨供應 |
詢價 | ||
TI |
23+ |
DIP |
3200 |
全新原裝、誠信經營、公司現貨銷售! |
詢價 | ||
TI |
IC |
8560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
TI/德州儀器 |
23+ |
IC |
880000 |
明嘉萊只做原裝正品現貨 |
詢價 | ||
羅蘭/FERRAZ |
23+ |
888 |
13000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
FERRAZ/羅蘭熔斷器 |
23+ |
標準封裝 |
5000 |
原廠授權一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質保 |
詢價 | ||
ST |
DIP |
93480 |
集團化配單-有更多數量-免費送樣-原包裝正品現貨-正規(guī) |
詢價 |
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