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MD35160

35AHIGHVOLTAGEMOTOROLATYPEPRESS-FITDIODE

Features ●GlassPassivatedDieConstruction ●LowLeakage ●LowCost ●HighSurgeCurrentCapability ●TypicalIRlessthan5.0μA

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

R35160

SiliconPowerRectifier

SiliconPowerRectifier ●LowForwardVoltage ●GlasstoMetalConstruction ●GlassPassivatedDie ●ExcellentReliability ●VRRMto1600V ●1050AmpsSurgeRating

MicrosemiMicrosemi Corporation

美高森美美高森美公司

REF35160

REF35UltraLow-Power,High-PrecisionVoltageReference

TITexas Instruments

德州儀器美國(guó)德州儀器公司

REF35160QDBVR

REF35UltraLow-Power,High-PrecisionVoltageReference

1Features ?Ultra-lowquiescentcurrent: –650nA(typical) ?Initialaccuracy:±0.05(maximum) ?Temperaturecoefficient: –12ppm/°C(maximumfor?40°Cto105°C) ?Output1/fnoise(0.1Hzto10Hz):3.3ppmP-P ?NRpintoreducenoise ?ENpintoreduceshutdowncurrentconsumption ?

TITexas Instruments

德州儀器美國(guó)德州儀器公司

REF35160QDBVR

REF35UltraLow-Power,High-PrecisionVoltageReference

1Features ?Ultra-lowquiescentcurrent: –650nA(typical) ?Initialaccuracy:±0.05(maximum) ?Temperaturecoefficient: –12ppm/°C(maximumfor?40°Cto105°C) ?Output1/fnoise(0.1Hzto10Hz):3.3ppmP-P ?NRpintoreducenoise ?ENpintoreduceshutdowncurrentconsumption ?

TI1Texas Instruments

德州儀器

REF35160QDBVR

REF35UltraLow-Power,High-PrecisionVoltageReference

1Features ?Ultra-lowquiescentcurrent: –650nA(typical) ?Initialaccuracy:±0.05(maximum) ?Temperaturecoefficient: –12ppm/°C(maximumfor?40°Cto105°C) ?Output1/fnoise(0.1Hzto10Hz):3.3ppmP-P ?NRpintoreducenoise ?ENpintoreduceshutdowncurrentconsumption ?

TITexas Instruments

德州儀器美國(guó)德州儀器公司

REF35160QDBVR

REF35UltraLow-Power,High-PrecisionVoltageReference

1Features ?Ultra-lowquiescentcurrent: –650nA(typical) ?Initialaccuracy:±0.05(maximum) ?Temperaturecoefficient: –12ppm/°C(maximumfor?40°Cto105°C) ?Output1/fnoise(0.1Hzto10Hz):3.3ppmP-P ?NRpintoreducenoise ?ENpintoreduceshutdowncurrentconsumption ?

TI1Texas Instruments

德州儀器

REF35160QDBVR

REF35UltraLow-Power,High-PrecisionVoltageReference

1Features ?Ultra-lowquiescentcurrent: –650nA(typical) ?Initialaccuracy:±0.05(maximum) ?Temperaturecoefficient: –12ppm/°C(maximumfor?40°Cto105°C) ?Output1/fnoise(0.1Hzto10Hz):3.3ppmP-P ?NRpintoreducenoise ?ENpintoreduceshutdowncurrentconsumption ?

TI1Texas Instruments

德州儀器

REF35160YBHR

REF35UltraLow-Power,High-PrecisionVoltageReference

1Features ?Ultra-lowquiescentcurrent: –650nA(typical) ?Initialaccuracy:±0.05(maximum) ?Temperaturecoefficient: –12ppm/°C(maximumfor?40°Cto105°C) ?Output1/fnoise(0.1Hzto10Hz):3.3ppmP-P ?NRpintoreducenoise ?ENpintoreduceshutdowncurrentconsumption ?

TI1Texas Instruments

德州儀器

REF35160YBHR

REF35UltraLow-Power,High-PrecisionVoltageReference

1Features ?Ultra-lowquiescentcurrent: –650nA(typical) ?Initialaccuracy:±0.05(maximum) ?Temperaturecoefficient: –12ppm/°C(maximumfor?40°Cto105°C) ?Output1/fnoise(0.1Hzto10Hz):3.3ppmP-P ?NRpintoreducenoise ?ENpintoreduceshutdowncurrentconsumption ?

TITexas Instruments

德州儀器美國(guó)德州儀器公司

REF35160YBHR

REF35UltraLow-Power,High-PrecisionVoltageReference

1Features ?Ultra-lowquiescentcurrent: –650nA(typical) ?Initialaccuracy:±0.05(maximum) ?Temperaturecoefficient: –12ppm/°C(maximumfor?40°Cto105°C) ?Output1/fnoise(0.1Hzto10Hz):3.3ppmP-P ?NRpintoreducenoise ?ENpintoreduceshutdowncurrentconsumption ?

TITexas Instruments

德州儀器美國(guó)德州儀器公司

S35160

SiliconPowerRectifier

SiliconPowerRectifier ●LowForwardVoltage ●GlasstoMetalSealConstruction ●GlassPassivatedDie ●VRRMto1600V ●1050AmpsSurgeRating

MicrosemiMicrosemi Corporation

美高森美美高森美公司

S35160

SiliconPowerRectifier

SiliconPowerRectifier ●LowForwardVoltage ●GlasstoMetalConstruction ●GlassPassivatedDie ●ExcellentReliability ●VRRMto1600V ●1050AmpsSurgeRating

MicrosemiMicrosemi Corporation

美高森美美高森美公司

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