M36DR432A集成電路（IC）的存儲器規(guī)格書PDF中文資料

M36DR432A屬于集成電路（IC）的存儲器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的M36DR432A存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

DESCRIPTION

The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDDF = VDDS =1.65V to 2.2V

– VPPF = 12V for Fast Program (optional)

■ ACCESS TIME: 100,120ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36DR432A: 00A0h

– Bottom Device Code, M36DR432B: 00A1h

FLASH MEMORY

■ 32 Mbit (2Mb x16) BOOT BLOCK

– Parameter Blocks (Top or Bottom Location)

■ PROGRAMMING TIME

– 10μs typical

– Double Word Programming Option

■ ASYNCRONOUS PAGE MODE READ

– Page width: 4 Word

– Page Mode Access Time: 35ns

■ DUAL BANK OPERATION

– Read within one Bank while Program or Erase within the other

– No Delay between Read and Write Operations

■ BLOCK PROTECTION ON ALL BLOCKS

– WPF for Block Locking

■ COMMON FLASH INTERFACE

– 64 bit Security Code

SRAM

■ 4 Mbit (256K x 16 bit)

■ LOW VDDS DATA RETENTION: 1V

■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS