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M36W0R6030T0ZAQ

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARYDESCRIPTION TheM36W0R6030T0andM36W0R6030B0combinetwomemorydevicesinaMulti-ChipPackage:a64-Mbit,MultipleBankFlashmemory,theM58WR064FT/B,andan8-MbitSRAM.Recommendedoperatingconditionsdonotallowmorethanonememorytobeactiveatthesametime. Thememoryiso

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M36W0R6030T0ZAQE

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARYDESCRIPTION TheM36W0R6030T0andM36W0R6030B0combinetwomemorydevicesinaMulti-ChipPackage:a64-Mbit,MultipleBankFlashmemory,theM58WR064FT/B,andan8-MbitSRAM.Recommendedoperatingconditionsdonotallowmorethanonememorytobeactiveatthesametime. Thememoryiso

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M36W0R6030T0ZAQF

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARYDESCRIPTION TheM36W0R6030T0andM36W0R6030B0combinetwomemorydevicesinaMulti-ChipPackage:a64-Mbit,MultipleBankFlashmemory,theM58WR064FT/B,andan8-MbitSRAM.Recommendedoperatingconditionsdonotallowmorethanonememorytobeactiveatthesametime. Thememoryiso

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M36W0R6030T0ZAQT

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARYDESCRIPTION TheM36W0R6030T0andM36W0R6030B0combinetwomemorydevicesinaMulti-ChipPackage:a64-Mbit,MultipleBankFlashmemory,theM58WR064FT/B,andan8-MbitSRAM.Recommendedoperatingconditionsdonotallowmorethanonememorytobeactiveatthesametime. Thememoryiso

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M36W0R6030T0

64Mbit(4Mbx16,MultipleBank,Burst)FlashMemoryand8Mbit(512Kbx16)SRAM,Multi-ChipPackage

SUMMARYDESCRIPTION TheM36W0R6030T0andM36W0R6030B0combinetwomemorydevicesinaMulti-ChipPackage:a64-Mbit,MultipleBankFlashmemory,theM58WR064FT/B,andan8-MbitSRAM.Recommendedoperatingconditionsdonotallowmorethanonememorytobeactiveatthesametime. Thememoryiso

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    M36W0R6030T0ZAQ

  • 制造商：

    Micron Technology Inc

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NA
24+
5205
原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
NA
22+
N/A
354000
詢(xún)價(jià)
ST/意法
23+
BGA
13000
原廠(chǎng)授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢(xún)價(jià)
ST/意法
22+
BGA
6000
進(jìn)口原裝 假一罰十 現(xiàn)貨
 詢(xún)價(jià)
ST
原廠(chǎng)原封
93480
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢(xún)價(jià)
ST/意法
24+
BGA
860000
明嘉萊只做原裝正品現(xiàn)貨
 詢(xún)價(jià)
24+
3000
公司存貨
 詢(xún)價(jià)
ST
23+
BGA
16900
正規(guī)渠道,只有原裝!
 詢(xún)價(jià)
ST
22+
BGA
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
 詢(xún)價(jià)
ST
BGA
461
正品原裝--自家現(xiàn)貨-實(shí)單可談
 詢(xún)價(jià)
更多M36W0R6030T0ZAQ供應(yīng)商 更新時(shí)間2024-11-15 15:24:00

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