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M36W0R6050B1ZAQF中文資料NUMONYX數(shù)據(jù)手冊PDF規(guī)格書
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Description
The M36W0R6050T1 and M36W0R6050B1 combine two memories in a Multi-Chip Package:
● a 64-Mbit, Multiple Bank Flash memory, the M58WR064HT/B, and
● a 32-Mbit Pseudo SRAM, the M69KB048BD.
The purpose of this document is to describe how the two memory components operate with respect to each other. It must be read in conjunction with the M58WR064HT/B and M69KB048BD datasheets, where all specifications required to operate the Flash memory and PSRAM components are fully detailed. These datasheets are available from the Numonyx web site: www.numonyx.com.
Features
■ Multi-Chip Package
– 1 die of 64 Mbit (4 Mb × 16) Flash memory
– 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM
■ Supply voltage
– VDDF = VDDP = VDDQF = 1.7 V to 1.95 V
■ Low power consumption
■ Electronic signature
– Manufacturer Code: 20h
– Device code (top flash configuration), M36W0R6050T1: 8810h
– Device code (bottom flash configuration), M36W0R6050B1: 8811h
■ Package
– ECOPACK?
Flash memory
■ Programming time
– 8 μs by Word typical for Fast Factory Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
■ Memory blocks
– Multiple Bank memory array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
■ Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 66 MHz
– Asynchronous/ Synchronous Page Read mode
– Random Access: 70 ns
■ Dual operations
– Program Erase in one Bank while Read in others
– No delay between Read and Write operations
■ Block locking
– All blocks locked at Power-up
– Any combination of blocks can be locked
– WPF for Block Lock-Down
■ Security
– 128-bit user programmable OTP cells
– 64-bit unique device number
■ Common Flash Interface (CFI)
■ 100 000 program/erase cycles per block
PSRAM
■ Access time: 70 ns
■ Asynchronous Page Read
– Page size: 8 words
– First access within page: 70 ns
– Subsequent read within page: 20 ns
■ Three Power-down modes
– Deep Power-Down
– Partial Array Refresh of 4 Mbits
– Partial Array Refresh of 8 Mbits
產(chǎn)品屬性
- 型號:
M36W0R6050B1ZAQF
- 制造商:
NUMONYX
- 制造商全稱:
Numonyx B.V
- 功能描述:
64 Mbit(4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit(2 Mb 】16) PSRAM, multi-chip package
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
NA/ |
439 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
ST |
BGA |
93480 |
集團(tuán)化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ST |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
ST |
24+ |
BGA |
12000 |
進(jìn)口原裝正品現(xiàn)貨 |
詢價 | ||
ST |
2021+ |
BGA |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
ST |
10+ |
BGA |
2251 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
ST |
23+ |
BGA |
12800 |
公司只有原裝 歡迎來電咨詢。 |
詢價 | ||
ST |
23+ |
BGA |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ST/意法 |
21+ |
BGA |
5000 |
原裝現(xiàn)貨/假一賠十/支持第三方檢驗 |
詢價 | ||
ST/意法 |
24+ |
BGA |
9800 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價 |