M36W216TI-ZAT中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

SUMMARY DESCRIPTION

The M36W216TI is a low voltage Multiple Memory Product which combines two memory devices; a 16 Mbit boot block Flash memory and a 2 Mbit SRAM. Recommended operating conditions do not allow both the Flash memory and the SRAM memory to be active at the same time. The memory is offered in a Stacked LFBGA66 (12x8mm, 8 x 8 active ball, 0.8 mm pitch) package and is supplied with all the bits erased (set to ‘1’).

FEATURES SUMMARY

■ MULTIPLE MEMORY PRODUCT

– 16 Mbit (1Mb x 16) Boot Block Flash Memory

– 2 Mbit (128Kb x 16) SRAM

■ SUPPLY VOLTAGE

–VDDF= VDDS= 2.7V to 3.3V

–VDDQF= VDDS= 2.7V to 3.3V

–VPPF= 12V for Fast Program (optional)

■ ACCESS TIME: 70ns, 85ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W216TI: 88CEh

– Bottom Device Code, M36W216BI: 88CFh