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M45PE40-VMP6G集成電路(IC)的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

M45PE40-VMP6G
廠商型號(hào)

M45PE40-VMP6G

參數(shù)屬性

M45PE40-VMP6G 封裝/外殼為8-VDFN 裸露焊盤;包裝為托盤;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC FLASH 4MBIT SPI 75MHZ 8VDFPN

功能描述

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

封裝外殼

8-VDFN 裸露焊盤

文件大小

536.24 Kbytes

頁(yè)面數(shù)量

35 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-6 13:00:00

M45PE40-VMP6G規(guī)格書(shū)詳情

SUMMARY DESCRIPTION

The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus.

The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle.

The memory is organized as 8 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 2048 pages, or 524288 bytes.

The memory can be erased a page at a time, using the Page Erase instruction, or a sector at a time, using the Sector Erase instruction.

FEATURES SUMMARY

■ 4Mbit of Page-Erasable Flash Memory

■ Page Write (up to 256 Bytes) in 11ms (typical)

■ Page Program (up to 256 Bytes) in 1.2ms (typical)

■ Page Erase (256 Bytes) in 10ms (typical)

■ Sector Erase (512 Kbit)

■ 2.7 to 3.6V Single Supply Voltage

■ SPI Bus Compatible Serial Interface

■ 33MHz Clock Rate (maximum)

■ Deep Power-down Mode 1μA (typical)

■ Electronic Signature

– JEDEC Standard Two-Byte Signature (4013h)

■ More than 100000 Write Cycles

■ More than 20 Year Data Retention

■ Packages

– ECOPACK? (RoHS compliant)

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    M45PE40-VMP6G

  • 制造商:

    Micron Technology Inc.

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    托盤

  • 存儲(chǔ)器類型:

    非易失

  • 存儲(chǔ)器格式:

    閃存

  • 技術(shù):

    FLASH - NOR

  • 存儲(chǔ)容量:

    4Mb(512K x 8)

  • 存儲(chǔ)器接口:

    SPI

  • 寫周期時(shí)間 - 字,頁(yè):

    15ms,3ms

  • 電壓 - 供電:

    2.7V ~ 3.6V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    8-VDFN 裸露焊盤

  • 供應(yīng)商器件封裝:

    8-VDFPN(6x5)(MLP8)

  • 描述:

    IC FLASH 4MBIT SPI 75MHZ 8VDFPN

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