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M470T3354CZ0-CE6中文資料三星數據手冊PDF規(guī)格書
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M470T3354CZ0-CE6規(guī)格書詳情
Features
? Performance range
? JEDEC standard 1.8V ± 0.1V Power Supply
? VDDQ = 1.8V ± 0.1V
? 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
? 4 Banks
? Posted CAS
? Programmable CAS Latency: 3, 4, 5
? Programmable Additive Latency: 0, 1 , 2 , 3 and 4
? Write Latency(WL) = Read Latency(RL) -1
? Burst Length: 4 , 8(Interleave/nibble sequential)
? Programmable Sequential / Interleave Burst Mode
? Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
? Off-Chip Driver(OCD) Impedance Adjustment
? On Die Termination with selectable values(50/75/150 ohms or disable)
? PASR(Partial Array Self Refresh)
? Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
- support High Temperature Self-Refresh rate enable feature
? Package: 60ball FBGA - 64Mx8 , 84ball FBGA - 32Mx16
? All of Lead-free products are compliant for RoHS
產品屬性
- 型號：
M470T3354CZ0-CE6
- 制造商：
SAMSUNG
- 制造商全稱：
Samsung semiconductor
- 功能描述：
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
23+ |
NA/ |
75 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
SMART |
三年內 |
1983 |
納立只做原裝正品13590203865 |
詢價 | |||
SAMSUNG/三星 |
SODIMM |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
SAM |
24+ |
37 |
詢價 | ||||
SAM |
23+ |
NA |
126 |
專做原裝正品,假一罰百! |
詢價 | ||
SAMSUNG/三星 |
N/A |
90000 |
集團化配單-有更多數量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
SAMSUNG |
22+23+ |
New |
32133 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨 |
詢價 | ||
SAMSUNG/三星 |
2022 |
NA |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
SAMSUNG |
21+ |
SODIMM |
35200 |
一級代理/放心采購 |
詢價 | ||
SAMSUNG/三星 |
23+ |
13000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |
