M50LPW040K1T中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

DESCRIPTION

The M50LPW040 is a 4 Mbit (512Kb x8) nonvolatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines an optional 12V power supply can be used to reduce the programming and the erasing times.

■ SUPPLY VOLTAGE

– VCC = 3V to 3.6V for Program, Erase and Read Operations

– VPP = 12V for Fast Program and Fast Erase (optional)

■ TWO INTERFACES

– Low Pin Count (LPC) Standard Interface for embedded operation with PC Chipsets.

– Address/Address Multiplexed (A/A Mux) Interface for programming equipment compatibility.

■ LPC HARDWARE INTERFACE MODE

– 5 Signal Communication Interface supporting Read and Write Operations

– Hardware Write Protect Pins for Block Protection

– Register Based Read and Write Protection

– 5 Additional General Purpose Inputs for platform design flexibility

– Synchronized with 33 MHz PCI clock

■ PROGRAMMING TIME

– 10μs typical

– Quadruple Byte Programming Option

■ 8 UNIFORM 64 Kbyte MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program and Block/Chip Erase algorithms

– Status Register Bits

■ PROGRAM and ERASE SUSPEND

– Read other Blocks during Program/Erase Suspend

– Program other Blocks during Erase Suspend

■ FOR USE in PC BIOS APPLICATIONS

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 26h